0000000001090016

AUTHOR

Theodossis Trypiniotis

showing 2 related works from this author

Electric control of the spin Hall effect by intervalley transitions

2013

Controlling spin-related material properties by electronic means is a key step towards future spintronic technologies. The spin Hall effect (SHE) has become increasingly important for generating, detecting and using spin currents, but its strength-quantified in terms of the SHE angle-is ultimately fixed by the magnitude of the spin-orbit coupling (SOC) present for any given material system. However, if the electrons generating the SHE can be controlled by populating different areas (valleys) of the electronic structure with different SOC characteristic the SHE angle can be tuned directly within a single sample. Here we report the manipulation of the SHE in bulk GaAs at room temperature by m…

Electronic structureSpin currentsSpin Hall effectElectronElectronic structureCrystal symmetrySpin-polarized electronsElectron populationGallium arsenideQuantum mechanicsGeneral Materials ScienceSemiconducting galliumStrength of materials0912 Materials EngineeringRoom temperatureSpin-½Intervalley transitionPhysicsCouplingElectromotive forceCondensed matter physicsSpintronicsMechanical EngineeringMaterial systemsGeneral ChemistryCondensed Matter::Mesoscopic Systems and Quantum Hall EffectCondensed Matter PhysicsElectric controlHeavy metalsMechanics of MaterialsSpin Hall effectSpin-orbit couplingsMaterial propertiesNature Materials
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Magnetic domain-wall racetrack memory for high density and fast data storage

2012

The racetrack memory device is a new concept of Magnetic RAM (MRAM) based on controlling domain wall (DW) motion in ferromagnetic nanowires. It promises ultra-high storage density thanks to the possibility to store multiple narrow DWS per memory cell. By using read and write heads based on magnetic tunnel junctions (MTJ) with perpendicular magnetic anisotropy (PMA) fast data access speed can also be achieved. Thereby the racetrack memory can be used as universal storage to address both embedded and standalone applications. In this paper, we present the device physics, integration circuit and architecture designs of a racetrack memory based on MTJs with PMA. Mixed SPICE simulations at 65 nm …

Standalone applicationsMagnetic domainComputer scienceSpiceArchitecture designsMRAM devicesMemory cellElectronic engineeringRacetrack memoryPerpendicular magnetic anisotropyMagnetic domainsMagnetoresistive random-access memoryHardware_MEMORYSTRUCTURESIntegration circuitsNanowiresbusiness.industryMagnetic devicesElectrical engineeringNon-volatile memory technologyDomain wall motionTunnel magnetoresistanceData storage equipmentComputer data storageFerromagnetic nanowireNode (circuits)Magnetic tunnel junctionbusinessRandom access storage
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