0000000000724663

AUTHOR

M. Bruggemann

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Heavy ion SEE studies on 4-Gbit NAND-Flash memories

2007

Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.

Flash (photography)Hardware_MEMORYSTRUCTURESComputer scienceGigabitEmphasis (telecommunications)Electronic engineeringNAND gateHeavy ionTransient analysisFlash memory2007 9th European Conference on Radiation and Its Effects on Components and Systems
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