6533b82efe1ef96bd1292668

RESEARCH PRODUCT

Heavy ion SEE studies on 4-Gbit NAND-Flash memories

Ari VirtanenD. WalterM. BruggemannReno Harboe-sorensenFritz GliemH. Schmidt

subject

Flash (photography)Hardware_MEMORYSTRUCTURESComputer scienceGigabitEmphasis (telecommunications)Electronic engineeringNAND gateHeavy ionTransient analysisFlash memory

description

Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.

yearjournalcountryeditionlanguage
2007-09-012007 9th European Conference on Radiation and Its Effects on Components and Systems
https://doi.org/10.1109/radecs.2007.5205555