0000000000073061
AUTHOR
Fritz Gliem
TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory
We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.
MBU characterization of NAND-Flash memories under heavy-ion irradiation
The angular dependence of the MBU-Cross-Section of two 8-Gbit-SLC-NAND-Flash and the orientation of the MBU-pattern has been measured.
Heavy ion SEE studies on 4-Gbit NAND-Flash memories
Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.
Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM
16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.
Heavy ion SEE test of 2 Gbit DDR3 SDRAM
New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.
SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation
The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.