0000000000073061

AUTHOR

Fritz Gliem

showing 6 related works from this author

TID and SEE Tests of an Advanced 8 Gbit NAND-Flash Memory

2008

We report on the dose and operational mode dependence of error percentage, stand-by current, erase and write time of 8 Gbit / 4 Gbit NAND-flash memories as well as on their static, dynamic and SEFI cross sections.

Non-volatile memoryHardware_MEMORYSTRUCTURESComputer scienceNand flash memorybusiness.industryGigabitHardware_ARITHMETICANDLOGICSTRUCTURESbusinessComputer hardwareFlash memoryHardware_LOGICDESIGN2008 IEEE Radiation Effects Data Workshop
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MBU characterization of NAND-Flash memories under heavy-ion irradiation

2011

The angular dependence of the MBU-Cross-Section of two 8-Gbit-SLC-NAND-Flash and the orientation of the MBU-pattern has been measured.

Flash (photography)Materials sciencebusiness.industryElectrical engineeringNAND gateOptoelectronicsAngular dependencebusinessHeavy ion irradiationCharacterization (materials science)2011 12th European Conference on Radiation and Its Effects on Components and Systems
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Heavy ion SEE studies on 4-Gbit NAND-Flash memories

2007

Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.

Flash (photography)Hardware_MEMORYSTRUCTURESComputer scienceGigabitEmphasis (telecommunications)Electronic engineeringNAND gateHeavy ionTransient analysisFlash memory2007 9th European Conference on Radiation and Its Effects on Components and Systems
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Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

2012

16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.

Physicsta114business.industryNAND gateDDR3 SDRAMHeavy ion irradiationFlash (photography)MBusGigabitElectronic engineeringOptoelectronicsHeavy ionbusinessSensitivity (electronics)
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Heavy ion SEE test of 2 Gbit DDR3 SDRAM

2011

New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.

EngineeringSingle event upsetGigabitbusiness.industryElectronic engineeringOptoelectronicsHeavy ionbusinessField-programmable gate arrayDDR3 SDRAM2011 12th European Conference on Radiation and Its Effects on Components and Systems
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SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

2011

The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.

Physicsta114ta213business.industryElectrical engineeringNAND gateOptoelectronicsAngular dependenceIrradiationbusinessHeavy ion irradiationIon2011 IEEE Radiation Effects Data Workshop
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