6533b82ffe1ef96bd1294835

RESEARCH PRODUCT

Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

Kai GrurmannHeikki KettunenFritz GliemVeronique Ferlet-cavroisHagen SchmidtGilbert LeibelingMartin Herrmann

subject

Physicsta114business.industryNAND gateDDR3 SDRAMHeavy ion irradiationFlash (photography)MBusGigabitElectronic engineeringOptoelectronicsHeavy ionbusinessSensitivity (electronics)

description

16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.

yearjournalcountryeditionlanguage
2012-07-01
10.1109/redw.2012.6353718http://juuli.fi/Record/0246569012