0000000000741458

AUTHOR

Gilbert Leibeling

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Heavy Ion Sensitivity of 16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM

2012

16/32-Gbit NAND-Flash and 4-Gbit DDR3 SDRAM memories have been tested under heavy ion irradiation. At high LET, 25nm NAND-Flash show MBUs at normal incidence. Techniques for SEFI mitigation in DDR3 SDRAM are studied.

Physicsta114business.industryNAND gateDDR3 SDRAMHeavy ion irradiationFlash (photography)MBusGigabitElectronic engineeringOptoelectronicsHeavy ionbusinessSensitivity (electronics)
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