6533b836fe1ef96bd12a12fd

RESEARCH PRODUCT

Heavy ion SEE test of 2 Gbit DDR3 SDRAM

Heikki KettunenFritz GliemVeronique Ferlet-cavroisMartin HerrmannKai Grurmann

subject

EngineeringSingle event upsetGigabitbusiness.industryElectronic engineeringOptoelectronicsHeavy ionbusinessField-programmable gate arrayDDR3 SDRAM

description

New generation 2 Gbit DDR3 SDRAMs from Micron, Samsung and Nanya have been tested under heavy ions. SEFIs significantly outweigh random SEU errors even at low LET; however, SEFIs can be mitigated by frequent re-initialization.

yearjournalcountryeditionlanguage
2011-09-012011 12th European Conference on Radiation and Its Effects on Components and Systems
https://doi.org/10.1109/radecs.2011.6131333