6533b838fe1ef96bd12a5312

RESEARCH PRODUCT

SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

Veronique Ferlet-cavroisFritz GliemKai GrurmannMartin HerrmannDietmar WalterHeikki Kettunen

subject

Physicsta114ta213business.industryElectrical engineeringNAND gateOptoelectronicsAngular dependenceIrradiationbusinessHeavy ion irradiationIon

description

The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.

https://doi.org/10.1109/redw.2010.6062521