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RESEARCH PRODUCT
SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation
Veronique Ferlet-cavroisFritz GliemKai GrurmannMartin HerrmannDietmar WalterHeikki Kettunensubject
Physicsta114ta213business.industryElectrical engineeringNAND gateOptoelectronicsAngular dependenceIrradiationbusinessHeavy ion irradiationIondescription
The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.
year | journal | country | edition | language |
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2011-07-01 | 2011 IEEE Radiation Effects Data Workshop |