0000000000874875

AUTHOR

Dietmar Walter

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SEU and MBU Angular Dependence of Samsung and Micron 8-Gbit SLC NAND-Flash Memories under Heavy-Ion Irradiation

2011

The angular dependence of the SEU and MBU cross sections of two 8-Gbit NAND-Flash memories, Samsung and Micron, is measured under Ar, Fe, and Kr irradiation. The omnidirectional sensitivity is calculated based on experimental results.

Physicsta114ta213business.industryElectrical engineeringNAND gateOptoelectronicsAngular dependenceIrradiationbusinessHeavy ion irradiationIon2011 IEEE Radiation Effects Data Workshop
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