Compositional and Optical Gradient in Films of PbZrxTi1-xO3 (PZT) Family

Pb(ZrxTi1-x)O3 (PZT) (x = 0-1) films have attracted the attention of researchers for the past 30 years due to their excellent ferroelectric (FE) and electromechanical properties, which have led to the commercialization of thin PZT films for ferroelectric random access memory (FeRAM), forming a market of several millions USD annually. Ferroelectricity of perovskite oxide thin films, especially PZT thin films, can be exploited in semiconductor devices to achieve non-volatile random access memory (NVRAM) with high-speed access and long endurance, which can overcome the barriers, encountered in current semiconductor memory technologies. The ferroelectricity can be also exploited to voltage depe…