0000000000740548
AUTHOR
M. G. Grimaldi
showing 4 related works from this author
Role of the strain in the epitaxial regrowth rate of heavily doped amorphous Si films
2008
Solid phase epitaxial regrowth (SPER) of p -doped preamorphized Si was studied by time resolved reflectivity. Strain and dopant concentration were opportunely varied by implanting neutral (Ge) and isovalent (B, Ga) impurities in order to disentangle the two different effects on SPER. Larger SPER rate variations occurred in strained doped Si with respect to undoped samples. The generalized Fermi level shifting model was implemented to include the role of the strain and to fit the experimental data over a large range of temperature for p - and n -type doping. We introduced a charged defect, whose energy level is independent of the dopant species. © 2008 American Institute of Physics.
Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films
2008
The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous phase in a crystalline matrix. In this paper, we report the effect of ion beam irradiation on the crystallization kinetics of amorphous Ge2Sb2Te5 alloy (GST). The transition rate of amorphous GST films was measured by in situ time resolved reflectivity (TRR). The amorphous to crystal transformation time decreases considerably in irradiated amorphous GST samples when ion fluence increases. The stability of amorphous Ge2Sb2Te5 thin films subjected to ion irradiation is discussed in terms of the free energy variation of the amorphous state because of damage accumulation. © 2008 Elsevier B.V. Al…
Formation and evolution of self-organized Au nanorings on indium-tin-oxide surface
2011
This work reports on the formation of Au nanoclusters and on their evolution in nanoring structures on indium-tin-oxide surface by sputtering deposition and annealing processes. The quantification of the characteristics of the nanorings (surface density, depth, height, and width) is performed by atomic force microscopy. The possibility to control these characteristics by tuning annealing temperature and time is demonstrated establishing relations which allow to set the process parameters to obtain nanostructures of desired morphological properties for various technological applications. © 2011 American Institute of Physics.
Room-Temperature Electrical Characteristics of Pd∕SiC Diodes with Embedded Au Nanoparticles at the Interface
2010
We investigate the effects of localized controlled nanometric inhomogeneities, represented by Au nanoparticles, on the electrical properties of Pd/SiC Schottky diodes. In particular, we investigate the effects of the nanoparticle radius R on the current-voltage characteristics. The main result concerns the strong dependence of the effective Schottky barrier height of the Pd/SiC contact on R, giving a practical technique to tailor, in a wide range, such a barrier height by simply changing the process parameters during the diode preparation. Then, from a basic understanding point of view, such data allow us to test the Tung model describing the effects of inhomogeneities on the electrical pro…