6533b831fe1ef96bd1299956

RESEARCH PRODUCT

Effect of ion irradiation on the stability of amorphous Ge2Sb2Te5 thin films

R. De BastianiEmanuele RiminiIsodiana CrupiM. G. GrimaldiA. M. Piro

subject

Nuclear and High Energy PhysicsMaterials scienceAlloyAnalytical chemistrySurfaces Coatings and FilmReflectivityengineering.materialSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaIonMatrix (chemical analysis)PHASE-CHANGE MATERIALSThermal stabilityIrradiationThin filmSILICONInstrumentationRBSChalcogenideMEMORYSurfaces and InterfacesReflectivityAmorphous solidIon irradiationengineeringDefectStability

description

The archival life of phase-change memories (PCM) is determined by the thermal stability of amorphous phase in a crystalline matrix. In this paper, we report the effect of ion beam irradiation on the crystallization kinetics of amorphous Ge2Sb2Te5 alloy (GST). The transition rate of amorphous GST films was measured by in situ time resolved reflectivity (TRR). The amorphous to crystal transformation time decreases considerably in irradiated amorphous GST samples when ion fluence increases. The stability of amorphous Ge2Sb2Te5 thin films subjected to ion irradiation is discussed in terms of the free energy variation of the amorphous state because of damage accumulation. © 2008 Elsevier B.V. All rights reserved.

yearjournalcountryeditionlanguage
2008-05-01
10.1016/j.nimb.2008.03.037http://hdl.handle.net/20.500.11769/13783