0000000000744154

AUTHOR

Vicente Muñoz Sanjosé

showing 3 related works from this author

ZnMgO-based UV photodiodes: a comparison of films grown by spray pyrolysis and MBE

2016

Detecting the UV part of the spectrum is fundamental for a wide range of applications where ZnMgO has the potential to play a central role. The shortest achievable wavelength is a function of the Mg content in the films, which in turn is dependent on the growth technique. Moreover, increasing Mg contents lead to an electrical compensation of the films, which directly affects the responsivity of the photodetectors. In addition, the metal-semiconductor interface and the presence of grain boundaries have a direct impact on the responsivity through different gain mechanisms. In this work, we review the development of ZnMgO UV Schottky photodiodes using molecular beam epitaxy and spray pyrolysis…

010302 applied physicsTelecomunicacionesMaterials sciencebusiness.industrySchottky diodePhotodetector02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesPhotodiodelaw.inventionResponsivityWavelengthSemiconductorlaw0103 physical sciencesOptoelectronicsGrain boundary0210 nano-technologybusinessMolecular beam epitaxy
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Hybrid multiple diffraction in semipolar wurtzite materials: (0112)-oriented ZnMgO/ZnO heterostructures as an illustration

2017

X-ray diffraction has been widely used to characterize the structural properties (strain and structural quality) of semiconductor heterostructures. This work employs hybrid multiple diffraction to analyze r-oriented Zn1xMgxO layers grown by molecular beam epitaxy on ZnO substrates. In such a low-symmetry material system, additional features appear in symmetric reflection scans, which are described as arising from hybrid multiple diffraction. First, the Bragg conditions necessary for these high-order processes to occur are introduced and applied to explain all the observed satellite reflections, identify the planes that contribute and compute a priori the angles at which they are observed. F…

Cristalls
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Biestabilidad óptica en GaSe combinando los efectos fototérmico, de fotoconductividad y Joule

1993

La dependencia con la temperatura del coeficiente de absorción del GaSe a 633 nm convierte a este material en idóneo para el diseño de dispositivos biestables a temperatura ambiente.

SemiconductorsÒptica
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