0000000000745503

AUTHOR

V. Torrisi

showing 2 related works from this author

Polymer/metal hybrid multilayers modified Schottky devices

2013

Insulating, polymethylmethacrylate (PMMA), and semiconducting, poly(3-hexylthiophene) (P3HT), nanometer thick polymers/Au nanoparticles based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate. An iterative method, which involves, respectively, spin-coating (PMMA and P3HT deposition) and sputtering (Au nanoparticles deposition) techniques to prepare Au/HyMLs/p-Si Schottky device, was used. The barrier height and the ideality factor of the Au/HyMLs/p-Si Schottky devices were investigated by current-voltage measurements in the thickness range of 1-5 bilayers. It was observed that the barrier height of such hybrid layered systems can be tuned as a function of bilayers …

Ideality factorMaterials sciencePhysics and Astronomy (miscellaneous)Layered systemNanoparticleSilicon GoldNanotechnologySingle-crystal substrates DepositionSubstrate (electronics)Poly-3-hexylthiopheneSettore ING-INF/01 - ElettronicaSettore FIS/03 - Fisica Della MateriaNanoparticleSputteringPolymer; Au nanoparticles; Schottky devicePolymerHybrid multilayerConductive polymerSpin coatingbusiness.industryBarrier heightSchottky diodeSputter depositionCurrent-voltage measurementSemiconducting siliconSchottky deviceOptoelectronicsSelf-assemblybusinessAu nanoparticles
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Schottky barrier height tuning by Hybrid organic-inorganic multilayers

2014

ABSTRACTSemiconducting and insulating polymers and copolymers/Au nanograins based hybrid multilayers (HyMLs) were fabricated on p-Si single-crystal substrate by an iterative method that involves, respectively, Langmuir-Blodgett and spin-coating techniques (for the deposition of organic film) and sputtering technique (for the deposition of metal nanograins) to prepare Au/HyMLs/p-Si Schottky device. The electrical properties of the Au/HyMLs/p-Si Schottky device were investigated by current-voltage (I–V) measurements in the thickness range of 1-5 bilayers (BL).At different number of layers, current-voltage (I–V) measurements were performed. Results showed a rectifying behavior. Junction parame…

Materials sciencebusiness.industrySchottky barrierMechanical EngineeringSchottky diodeSchottkySubstrate (electronics)Condensed Matter PhysicMultilayer; Schottky; HybridHybridSemiconductorSputteringMechanics of MaterialsMultilayerOptoelectronicsRectangular potential barrierMaterials Science (all)businessDeposition (law)Diode
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