Electronic properties of Co2MnSi thin films studied by hard x-ray photoelectron spectroscopy
This work reports on the electronic properties of thin films of the Heusler compound Co2MnSi studied by means of hard x-ray photoelectron spectroscopy (HAXPES). The results of photoelectron spectroscopy from multilayered thin films excited by photons of 2?8?keV are presented. The measurements were performed on (substrate/buffer layer/Co2MnSi(z)/capping layer) multilayers with a thickness z ranging from 0 to 50?nm. It is shown that high energy spectroscopy is a valuable tool for non-destructive depth profiling. The experimentally determined values of the inelastic electron mean free path in Co2MnSi increase from about 19.5 to 67?? on increasing the kinetic energy from about 1.9 to 6.8?keV. T…
Photon Energy Dependent Hard X-ray Photoemission Spectroscopy of YbCu2Si2
We have performed photon energy ( h ν) dependent hard X-ray photoemission spectroscopy (HAXPES) for YbCu 2 Si 2 , which is a heavy Fermion compound with intermediate Yb valence. We identified that the bulk components in the Si 1 s and Yb 3 d spectra develop with increasing h ν from 2.5 to 6 keV. Moreover, the temperature dependence of the Yb 3 d spectra measured at h ν= 8 keV has shown a valence fluctuation behavior. These results suggest that high h ν HAXPES is essential to determine the mean valence of the Yb compounds.