0000000000759531

AUTHOR

S. Massetti

showing 2 related works from this author

Assessing Radiation Hardness of SIC MOS Structures

2018

It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.

Materials scienceTransistorPower budgetEngineering physicslaw.inventionchemistry.chemical_compoundchemistrylawPower electronicsLogic gateMOSFETSilicon carbideRadiation hardeningCooling down2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
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Prototyping and Characterization of 1.2KV SIC Schottky Diodes for TWTA Application: The Challenge to Meet the User Specification

2017

lcsh:GE1-350Engineeringbusiness.industryElectrical engineeringSchottky diodebusinesslcsh:Environmental sciencesEnergy (signal processing)Characterization (materials science)E3S Web of Conferences
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