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RESEARCH PRODUCT
Assessing Radiation Hardness of SIC MOS Structures
E. CorderoVictor SolerD. LopezMaria CabelloEnrique MasetS. MassettiJ MorenoPhillippe Godignonsubject
Materials scienceTransistorPower budgetEngineering physicslaw.inventionchemistry.chemical_compoundchemistrylawPower electronicsLogic gateMOSFETSilicon carbideRadiation hardeningCooling downdescription
It is widely known that devices based on wide gap semiconductors show potential benefits in terms of saving mass, increasing power densities compared with standard Silicon ones [1]. The higher operating temperatures these components can withstand can also reduce the power budget currently used for cooling down power electronics. These factors are critical in space applications where, for example SiC devices are very promising. However, in this field reliability is a paramount requirement, and radiation conditions can compromise the usage of these new technologies.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-09-01 | 2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) |