Chalcopyrite Semiconductors for Quantum Well Solar Cells
We explore here the possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se2 in a quantum well solar cell structure. Thin alternating layers of 50 nm CuInSe2 and CuGaSe2 were grown epitaxially on a GaAs(100) substrate employing metalorganic vapor phase epitaxy. The optical properties of a resulting structure of three layers were investigated by photoluminescence and photoreflectance, indicating charge carrier confinement ∗To whom correspondence should be addressed †Helmholtz-Zentrum Berlin ‡Universidad Politecnica de Madrid ¶University of Illinois §University of Jyvaskyla ‖Current address: Universitat des Saarlandes, Uni Campus, Gebaude A5.1, 66123 Saarbr…
Novel Polymorph of GaSe
2D GaSe is a semiconductor belonging to the group of post-transition metal chalcogenides with great potential for advanced optoelectronic applications. The weak interlayer interaction in multilayer 2D materials allows the formation of several polymorphs. Here, the first structural observation of a new GaSe polymorph is reported, characterized by a distinct atomic configuration with a centrosymmetric monolayer (D-3d point group). The atomic structure of this new GaSe polymorph is determined by aberration-corrected scanning transmission electron microscopy. Density-functional theory calculations verify the structural stability of this polymorph. Furthermore, the band structure and Raman inten…