0000000000776604

AUTHOR

K. Ahn

showing 2 related works from this author

Giant negative magnetoresistance in GdI2

2000

Abstract GdI 2 is a layered d 1 compound which is isostructural with and nominally isoelectronic to the superconductors 2H–TaS 2 and 2H–NbSe 2 . GdI 2 orders ferromagnetically at 276(2) K and displays large negative magnetoresistance ∼70% at 7 T close to room temperature. At 10 K the saturation magnetization is 7.33(5) μ B in good agreement with the value predicted from spin polarized band structure calculations.

SuperconductivityCondensed matter physicsFerromagnetismMagnetoresistanceMechanics of MaterialsChemistryMechanical EngineeringMaterials ChemistryMetals and AlloysIsostructuralElectronic band structureSpin-½Journal of Alloys and Compounds
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Giant Negative Magnetoresistance in GdI2: Prediction and Realization

1999

The electronic structure of the layered d1 compound GdI2 has been examined systematically in view of its relation to other layered d1 systems including superconducting and isostructural 2H-TaS2 and 2H-NbSe2. A van Hove type instability is evident in suitable representations of the Fermi surface. The presence of the half-filled and magnetic 4f level should preclude the possibility of superconductivity. Instead GdI2 orders ferromagnetically at 290(5) K and displays large negative magnetoresistance ≈70% at 7 T close to room temperature. This finding provides support to the idea that materials can be searched rationally for interesting properties through high level electronic structure calculat…

SuperconductivityCondensed matter physicsMagnetoresistanceChemistryGiant magnetoresistanceFermi surfaceElectronic structureCondensed Matter PhysicsElectronic Optical and Magnetic MaterialsInorganic ChemistryMaterials ChemistryCeramics and CompositesDensity of statesPhysical and Theoretical ChemistryMetal–insulator transitionElectronic band structureJournal of Solid State Chemistry
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