Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study

In this work, we report on a comparison among graphene field-effect transistors (GFETs) employing different dielectrics as gate layers to evaluate their microwave response. In particular, aluminum oxide (Al$_{2}$O$_{3}$), titanium oxide (TiO$_{2}$), and hafnium oxide (HfO$_{2}$) have been tested. GFETs have been fabricated on a single chip and a statistical analysis has been performed on a set of 24 devices for each type of oxide. Direct current and microwave measurements have been carried out on such GFETs and short circuit current gain and maximum available gain have been chosen as quality factors to evaluate their microwave performance. Our results show that all of the devices belonging …