0000000000814116
AUTHOR
Thomas Tietze
Magnetism of Co-doped ZnO thin films
We have investigated magnetic and transport properties of 5% Co-doped and undoped ZnO thin films deposited on $r$ plane ${\mathrm{Al}}_{2}{\mathrm{O}}_{3}$ substrates by pulsed laser deposition. The Co doped films showed paramagnetic and ferromagnetic behavior as well as a high magnetoresistance and a small anomalous Hall effect. In a range of $0\phantom{\rule{0.3em}{0ex}}\text{to}\phantom{\rule{0.3em}{0ex}}5\phantom{\rule{0.3em}{0ex}}\mathrm{T}$ at low temperatures we observed a double sign change of the magnetoresistance. For undoped ZnO films, prepared by the same conditions, only a negative MR was observed, but surprisingly also a very small anomalous Hall effect. We explain our results…
Absence of element specific ferromagnetism in Co doped ZnO investigated by soft X-ray resonant reflectivity
On the quest for the intrinsic origin of ferromagnetism (FM) in ZnO doped with a few percent transition metal, we show detailed X-ray resonant magnetic reflectivity (XRMR) measurements, performed at the Co L2,3 and the O K edges of pulsed laser deposition (PLD) prepared samples. These samples show ferromagnetism at room temperature (RT) (QUID: about 2μB /Co). But in contrast to the QUID measurements, element specific reflection measurements as a function of angle (θ-2θ scans) and energy (const. qz) do not show any sign of ferromagnetism. Therefore, we can exclude without doubt Co as a possible origin for FM in this system. Our results are in perfect agreement with earlier published XMCD dat…