Estudio estructural y caracterización óptica y electrónica del sulfuro de bismuto

1986

Semiconductor optical waveguide devices modulated by surface acoustic waves

2019

Influence of krypton atoms on the structure of amorphous hydrogenated carbon deposited by plasma enhanced chemical vapor deposition

2010

Hydrogenated amorphous carbon (a-C:H) films were prepared by plasma enhanced chemical vapor deposition using methane (CH4 ) plus krypton (Kr) mixed atmosphere. The depositions were performed as function of the bias voltage and krypton partial pressure. The goal of this work was to study the influence of krypton gas on the physical properties of a-C:H films deposited on the cathode electrode. Krypton concentration up to 1.6 at. %, determined by Rutherford Back-Scattering, was obtained at high Kr partial pressure and bias of -120 V. The structure of the films was analyzed by means of optical transmission spectroscopy, multi-wavelength Raman scattering and Fourier Transform Infrared spectrosco…