Disorder and localization effects on the local spectroscopic and infrared optical properties ofGa1−xMnxAs

We study numerically the influence of disorder and localization effects on the local spectroscopic characteristics and infrared optical properties of ${\text{Ga}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{As}$. We treat the band structure and disorder effects at an equal level by using an exact diagonalization supercell simulation method. This method accurately describes the low-doping limit and gives a clear picture of the transition to higher dopings, which captures the localization effects inaccessible to other theoretical methods commonly used. Our simulations capture the rich in-gap localized states observed in scanning tunneling microscopy studies and reproduce the observed features of t…