Three-dimensional electrons and two-dimensional electric subbands in the transport properties of tin-dopedn-type indium selenide: Polar and homopolar phonon scattering

Electron-scattering mechanisms in n-type indium selenide doped with different amounts of tin are studied by means of the Hall effect (30--300 K) and photo-Hall effect (300 K). The electron mobility at room temperature is found to increase with the free-electron concentration in samples with low tin content. The same behavior is observed when the electron concentration increases due to thermal annealing or photogeneration. That is explained through the presence of two kinds of free electrons contributing to the charge transport along the layers: high-mobility three-dimensional (3D) electrons in the conduction band, and low-mobility two-dimensional electrons in the electric subbands. These 2D…