0000000000855962

AUTHOR

Sujit Das

Strain-induced improvement of retention loss in PbZr0.2Ti0.8O3 films

The retention behavior of nanoscale domains in PbZr0.2Ti0.8O3 thin films is investigated by in-situ controlling the epitaxial strain arising from a piezoelectric substrate. The retention behavior in our sample shows strong polarity-dependence: Upward-poled domains exhibit excellent stability, whereas downward-poled domains reveal a stretched exponential decay. Reversible release of in-plane compressive strain strongly reduced the retention loss, reflected in an enhancement of the relaxation time by up to one order of magnitude. We tentatively attribute the observed behavior to a strain dependence of the built-in field at the interface to the La0.7Sr0.3MnO3 bottom electrode, with a possible …

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Strain dependence of antiferromagnetic interface coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices

We have investigated the magnetic response of La0.7Sr0.3MnO3/SrRuO3 superlattices to biaxial in-plane strain applied in-situ. Superlattices grown on piezoelectric substrates of 0.72PbMg1/3Nb2/3O3-0.28PbTiO3(001) (PMN-PT) show strong antiferromagnetic coupling of the two ferromagnetic components. The coupling field of mu0HAF = 2.8 T is found to decrease by deltaHAF/delta epsilon ~ -520 mT %-1 under reversible biaxial strain mu0HAF at 80 K in a [La0.7Sr0.3MnO3(22)/SrRuO3(55)]15 superlattice. This reveals a significant strain effect on interfacial coupling. The applied in-plane compression enhances the ferromagnetic order in the manganite layers which are under as-grown tensile strain. It is t…

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Doping effects on the magnetic frustration in the honeycomb iridates

We investigate the doping effects of magnetic and nonmagnetic impurities injected to the honeycomb iridate sample of Na2IrO3 . Both the doping result in changing the ordering temperature as well as the Curie-Weiss temperature of the parent sample as a consequence of enhancement of the lattice frustration, screening of the Ir atoms and spin-orbit effects that reflects in the susceptibility and specific heat measurements. Our findings are corroborated by a detailed comparative study of various magnetic and nonmagnetic impurity atoms that have notable effects on different electronic properties of the doped compounds.

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