Novel constant current driver for ISFET/MEMFETs characterization
Abstract In the present work a new constant current driver for ISFETs and MEMFETs sensors has been developed. The proposed circuit maintains the ISFET/MEMFET operation point at constant drain–source current and voltage. The combination of some programmable current sources and an appropriate selection of a simple precision resistor allow a good ISFET/MEMFET polarization. The use of operational amplifiers with low offset and drift are required to provide the buffering function needed by the sensor.
Novel voltage-controlled conditioning circuit applied to the ISFETs temporary drift and thermal dependency
This paper describes a novel conditioning circuit applied to ion-sensitive field-effect transistors/membrane-ion-sensitive field-effect transistors (ISFETs/MEMFETs) sensors. The novel conditioning circuit allows the sensor polarization with the needed either voltage or current required in each application, thanks to two completely independent voltage-controlled blocks (current and voltage blocks). The control of the voltage block is the most critical point in our design because the voltage block maintains the sensor feedback stable, avoiding the thermal and temporary drifts of the sensor feedback.