0000000000858484

AUTHOR

Marja-leena Kääriäinen

showing 2 related works from this author

Fabrication and characterization of vacuum deposited fluorescein thin films

2011

Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic devices. Thin films of fluorescein were deposited on glass, fluorine-tin-oxide (FTO) coated glass with and without atomically layer deposited (ALD) nanocrystalline 20 nm thick anatase TiO2 coating. Surface topology, absorption and emission spectra of the films depends on their thickness and the material of supporting substrate. On a smooth glass surface the dye initially formes islands before merging into a uniform layer after 5 to 10 monolayers. On FTO cove…

Absorption spectroscopyta221Analytical chemistryFOS: Physical sciencesSubstrate (electronics)Vacuum evaporationVacuum depositionMesoscale and Nanoscale Physics (cond-mat.mes-hall)Materials ChemistryThin filmta216ta116Surface statesCondensed Matter - Materials ScienceCondensed Matter - Mesoscale and Nanoscale Physicsta114business.industryChemistryMetals and AlloysMaterials Science (cond-mat.mtrl-sci)Surfaces and InterfacesNanocrystalline materialSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOptoelectronicsbusinessLayer (electronics)Thin Solid Films
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Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"

2017

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual proj…

semiconductor manufacturingThin filmsPatent literature2015 Nano TechnologyHOL - HolstLibrary scienceNanotechnology02 engineering and technologydeposition01 natural sciencesPoster presentationsAtomic layer deposition0103 physical sciencesAtomic layer epitaxy[CHIM]Chemical SciencesReading listPatentsComputingMilieux_MISCELLANEOUSgas-solid reaction010302 applied physicsTS - Technical SciencesIndustrial Innovationinorganic materialPhysicsAtomic layer depositionSilicaSurfaces and InterfacesatomikerroskasvatusAtomic layer021001 nanoscience & nanotechnologyCondensed Matter Physicshistory of technologySurfaces Coatings and FilmsALD0210 nano-technologySoviet unionAtomic layer epitaxial growthEpitaxyJournal of Vacuum Science and Technology A
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