6533b872fe1ef96bd12d3b3d

RESEARCH PRODUCT

Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"

Riikka L. PuurunenMikhail ChubarovTommi KääriäinenCheol Seong HwangÇAǧla ÖZgit-akgünGeert RampelbergErwan RauwelRong ChenAnjana DeviDavid Campbell CameronThomas E. SeidelJussi LyytinenLiliya ElnikovaA. A. MalkovMarkku LeskeläGeorgi PopovHenrik PedersenTanja KallioA. Outi I. KrauseJaana KanervoJakob KuhsTobias TörndahlGloria GottardiA. A. MalyginNathanaelle SchneiderFred RoozeboomFred RoozeboomMałgorzata NorekMarja-leena KääriäinenAdam A. ŁApickiDohan KimIrina KärkkänenFabien PiallatHarri LipsanenEsko AhvenniemiOili YlivaaraLev KlibanovJyrki MolariusClaudia WiemerShih Hui JenJ. Ruud Van OmmenAndrew R. AkbashevKestutis GrigorasDmitry SuyatinChristian MilitzerYury KoshtyalHele SavinJonas SundqvistTimo SajavaaraLuca LamagnaVéronique CremersStefan Ivanov BoyadjievMikhail PanovSaima AliOksana YurkevichDennis M. HausmannIvan KhmelnitskiyHossein SalamiViktor DrozdMikhael BechelanyRobin H. A. RasAbdelkader MennadMaria Berdova

subject

semiconductor manufacturingThin filmsPatent literature2015 Nano TechnologyHOL - HolstLibrary scienceNanotechnology02 engineering and technologydeposition01 natural sciencesPoster presentationsAtomic layer deposition0103 physical sciencesAtomic layer epitaxy[CHIM]Chemical SciencesReading listPatentsComputingMilieux_MISCELLANEOUSgas-solid reaction010302 applied physicsTS - Technical SciencesIndustrial Innovationinorganic materialPhysicsAtomic layer depositionSilicaSurfaces and InterfacesatomikerroskasvatusAtomic layer021001 nanoscience & nanotechnologyCondensed Matter Physicshistory of technologySurfaces Coatings and FilmsALD0210 nano-technologySoviet unionAtomic layer epitaxial growthEpitaxy

description

Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual project on the history of ALD (VPHA) is a volunteer-based effort with open participation, set up to make the early days of ALD more transparent. In VPHA, started in July 2013, the target is to list, read and comment on all early ALD academic and patent literature up to 1986. VPHA has resulted in two essays and several presentations at international conferences. This paper, based on a poster presentation at the 16th International Conference on Atomic Layer Deposition in Dublin, Ireland, 2016, presents a recommended reading list of early ALD publications, created collectively by the VPHA participants through voting. The list contains 22 publications from Finland, Japan, Soviet Union, United Kingdom, and United States. Up to now, a balanced overview regarding the early history of ALD has been missing; the current list is an attempt to remedy this deficiency. Peer reviewed

yearjournalcountryeditionlanguage
2017-01-01Journal of Vacuum Science and Technology A
10.1116/1.4971389https://doi.org/10.1116/1.4971389