Structure and characteristics of laser crystallized thin amorphous Si films
Abstract Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further increase of the energy does not improve crystallinity. A large grained polycrystalline Si was obtained as revealed by surface analysis. A significant increase in carrier mobility was observed after laser crystallization.
Review article: recommended reading list of early publications on atomic layer deposition - outcome of the "virtual Project on the History of ALD"
Atomic layer deposition (ALD), a gas-phase thin film deposition technique based on repeated, self-terminating gas-solid reactions, has become the method of choice in semiconductor manufacturing and many other technological areas for depositing thin conformal inorganic material layers for various applications. ALD has been discovered and developed independently, at least twice, under different names: atomic layer epitaxy (ALE) and molecular layering. ALE, dating back to 1974 in Finland, has been commonly known as the origin of ALD, while work done since the 1960s in the Soviet Union under the name "molecular layering" (and sometimes other names) has remained much less known. The virtual proj…
PATTERNED LASER CRYSTALLIZATION OF a-Si
PATTERNED LASER CRYSTALLIZATION OF a-SiThin films of amorphous Si on glass were crystallized by pulsed nano- and picosecond lasers. Two methods for creating the desired patterns of crystallized regions were used. In the former, the pattern is produced by a focused laser beam, and in the latter it is made using a prefabricated mask. The electric conductivity of crystallized films increases by more than 4 orders of magnitude in comparison with untreated amorphous films.