6533b829fe1ef96bd128a523

RESEARCH PRODUCT

Structure and characteristics of laser crystallized thin amorphous Si films

Mikhail ChubarovJelena ButikovaRobert KalendarjovAleksej MuhinG. MarcinsGeorgy ChikvaidzePavel BirjukovI. TaleBoris Polyakov

subject

Laser crystallizationElectron mobilityMaterials scienceAnalytical chemistryPhysics::OpticsP-SiLasereye diseasesAmorphous solidlaw.inventionCondensed Matter::Materials ScienceCrystallinityCrystallographyEnergy(all)lawCondensed Matter::SuperconductivityPicosecondsense organsCrystalliteA-SiAFMThin filmEnergy (signal processing)Raman scattering spectra

description

Abstract Pure amorphous Si thin films deposited on oxidized crystalline Si surface (111) were crystallized by picosecond UV laser pulses. The Raman scattering spectra show that pulse energy of 330 mJ/cm2 is enough to fully crystallize Si film and further increase of the energy does not improve crystallinity. A large grained polycrystalline Si was obtained as revealed by surface analysis. A significant increase in carrier mobility was observed after laser crystallization.

yearjournalcountryeditionlanguage
2011-01-01Energy Procedia
https://doi.org/10.1016/j.egypro.2011.01.007