Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…

Publisher's Note: “Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices” [Appl. Phys. Lett. 112, 142401 (2018)]

Nanosession: Spin Tunneling Systems

A novel picture for charge transport interpretation in epitaxial manganite thin films

Transport characterizations of epitaxial La0.7Sr0.3MnO3 thin films in the thickness range 5-40 nm and 25-410 K temperature interval have been accurately collected. We show that taking into account polaronic effects allows to achieve the best ever fitting of the transport curves in the whole temperature range. The Current Carriers Density Collapse picture accurately accounts for the properties variation across the metal-insulator-transition. The electron-phonon coupling parameter estimations are in a good agreement with theoretical predictions. The results promote a clear and straightforward quantitative description of the manganite films involved in charge transport device applications.