6533b7cefe1ef96bd125715e
RESEARCH PRODUCT
Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices
Alberto RiminucciIlaria BergentiRaimondo CecchiniValentin DediuFrancesco BorgattiPatrizio GraziosiM. CalbucciMirko Preziososubject
Materials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceSpintronicsCondensed matter physicsVALVESSpin valve02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesSpace chargePoole–Frenkel effectTRANSPORTOrganic semiconductorINTERFACESPIN INJECTIONElectrical resistance and conductanceElectrical resistivity and conductivity0103 physical sciencesMAGNETORESISTANCEHETEROJUNCTIONfilms010306 general physics0210 nano-technologyTEMPERATUREdescription
The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which the spin valve behavior is usually observed, the charge transport was modelled by nearest neighbor hopping in intra-gap impurity levels, with a charge carrier density of n0 = (1.44 ± 0.21) × 1015 cm−3 at room temperature. Such a low carrier density can explain why no magnetoresistance was observed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-04-02 |