Search results for "MAGNETORESISTANCE"

showing 10 items of 173 documents

Low intrinsic carrier density LSMO/Alq3/AlOx/Co organic spintronic devices

2018

The understanding of spin injection and transport in organic spintronic devices is still incomplete, with some experiments showing magnetoresistance and others not detecting it. We have investigated the transport properties of a large number of tris-(8-hydroxyquinoline)aluminum-based organic spintronic devices with an electrical resistance greater than 5 MΩ that did not show magnetoresistance. Their transport properties could be described satisfactorily by known models for organic semiconductors. At high voltages (>2 V), the results followed the model of space charge limited current with a Poole-Frenkel mobility. At low voltages (∼0.1 V), that are those at which t…

Materials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceSpintronicsCondensed matter physicsVALVESSpin valve02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesSpace chargePoole–Frenkel effectTRANSPORTOrganic semiconductorINTERFACESPIN INJECTIONElectrical resistance and conductanceElectrical resistivity and conductivity0103 physical sciencesMAGNETORESISTANCEHETEROJUNCTIONfilms010306 general physics0210 nano-technologyTEMPERATURE
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Electronic Energy Meter Based on a Tunnel Magnetoresistive Effect (TMR) Current Sensor

2017

In the present work, the design and microfabrication of a tunneling magnetoresistance (TMR) electrical current sensor is presented. After its physical and electrical characterization, a wattmeter is developed to determine the active power delivered to a load from the AC 50/60 Hz mains line. Experimental results are shown up to 1000 W of power load. A relative uncertainty of less than 1.5% with resistive load and less than 1% with capacitive load was obtained. The described application is an example of how TMR sensing technology can play a relevant role in the management and control of electrical energy.

tunnel magnetoresistance; current sensor; energy meter; power measurement; wattmeter; internet-of-thingsEngineeringMagnetoresistancepower measurementPower factorlcsh:Technology01 natural sciencesArticlelaw.inventionElectricity meterlaw0103 physical sciencescurrent sensorinternet-of-thingsGeneral Materials ScienceCurrent sensorlcsh:Microscopylcsh:QC120-168.85wattmeter010302 applied physicslcsh:QH201-278.5lcsh:Tbusiness.industrytunnel magnetoresistance010401 analytical chemistryElectrical engineeringWattmeterAC powerenergy meterLine (electrical engineering)0104 chemical sciencesTunnel magnetoresistancelcsh:TA1-2040lcsh:Descriptive and experimental mechanicslcsh:Electrical engineering. Electronics. Nuclear engineeringlcsh:Engineering (General). Civil engineering (General)businesslcsh:TK1-9971Materials; Volume 10; Issue 10; Pages: 1134
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Metal-Controlled Magnetoresistance at Room Temperature in Single-Molecule Devices

2017

The appropriate choice of the transition metal complex and metal surface electronic structure opens the possibility to control the spin of the charge carriers through the resulting hybrid molecule/metal spinterface in a single-molecule electrical contact at room temperature. The single-molecule conductance of a Au/molecule/Ni junction can be switched by flipping the magnetization direction of the ferromagnetic electrode. The requirements of the molecule include not just the presence of unpaired electrons: the electronic configuration of the metal center has to provide occupied or empty orbitals that strongly interact with the junction metal electrodes and that are close in energy to their F…

Magnetoresistance02 engineering and technologyElectronic structure010402 general chemistry01 natural sciencesBiochemistryCatalysisMetal L-edgesymbols.namesakeColloid and Surface ChemistryTransition metalMagnetoresistènciaSurface statesDensity functionalsCondensed matter physicsChemistryMagnetoresistanceFermi levelTeoria del funcional de densitatGeneral ChemistryEspintrònicaSpintronics021001 nanoscience & nanotechnology0104 chemical sciencesFerromagnetismsymbolsCondensed Matter::Strongly Correlated ElectronsElectron configuration0210 nano-technology
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Giant Dzyaloshinskii-Moriya Interaction and Room-Temperature Nanoscale Skyrmions in CoFeB/MgO Heterostructures

2021

Magnetic skyrmions in heavy metal (HM)/CoFeB/MgO structures are of particular interest for skyrmion-based magnetic tunnel junction (MTJ) devices because of their reliable generation, stability and read-out through purely electrical methods. To optimize the properties, such as stability, a strong Dzyaloshinskii-Moriya interaction (DMI) is required at room temperature. Here, using first-principles calculations, we demonstrate that giant DMI can be obtained in Ir/CoFe structures with an Fe-terminated configuration. Moreover, Brillouin light scattering measurements show that indeed Ta/Ir/Co20Fe60B20/MgO thin films with perpendicular magnetic anisotropy exhibit a large DMI value (1.13 mJ/m2), wh…

Brillouin zoneTunnel magnetoresistanceMaterials scienceCondensed matter physicsSkyrmionHeterojunctionThin filmMagnetic force microscopeNanoscopic scaleLight scatteringSSRN Electronic Journal
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Spin Hall magnetoresistance in antiferromagnetic insulators

2020

Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct observation of the antiferromagnetic state, however, is challenging due to the absence of a macroscopic magnetization. Here, we show that the spin Hall magnetoresistance (SMR) is a versatile tool to probe the antiferromagnetic spin structure via simple electrical transport experiments by investigating the easy-plane antiferromagnetic insulators $\alpha$-Fe2O3 (hematite) and NiO in bilayer heterostructures with a Pt heavy metal top electrode. While rotating an ext…

010302 applied physicsCondensed Matter - Materials ScienceMagnetization dynamicsMaterials scienceMagnetoresistanceSpintronicsCondensed matter physicsMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesGeneral Physics and Astronomy02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesMagnetic fieldMagnetizationFerromagnetismFerrimagnetism0103 physical sciencesAntiferromagnetismCondensed Matter::Strongly Correlated Electrons0210 nano-technologyJournal of Applied Physics
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Giant Magnetoresistance in Rare Earth Compounds

2008

Inorganic ChemistryCondensed matter physicsChemistryRare earthIntermetallicGiant magnetoresistanceZeitschrift für anorganische und allgemeine Chemie
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Energy scales and magnetoresistance at a quantum critical point

2009

The magnetoresistance (MR) of CeCoIn_5 is notably different from that in many conventional metals. We show that a pronounced crossover from negative to positive MR at elevated temperatures and fixed magnetic fields is determined by the scaling behavior of quasiparticle effective mass. At a quantum critical point (QCP) this dependence generates kinks (crossover points from fast to slow growth) in thermodynamic characteristics (like specific heat, magnetization etc) at some temperatures when a strongly correlated electron system transits from the magnetic field induced Landau Fermi liquid (LFL) regime to the non-Fermi liquid (NFL) one taking place at rising temperatures. We show that the abov…

Quantum phase transitionPhysicsMagnetoresistanceCondensed matter physicsStrongly Correlated Electrons (cond-mat.str-el)General Physics and AstronomyFOS: Physical sciences01 natural sciences010305 fluids & plasmasMagnetizationCondensed Matter - Strongly Correlated ElectronsEffective mass (solid-state physics)Quantum critical point0103 physical sciencesQuasiparticleStrongly correlated materialCondensed Matter::Strongly Correlated Electrons010306 general physicsScaling
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Magnetic tunneling junctions with the Heusler compound

2005

Abstract Certain Heusler phases belong to the materials which are discussed as potential half metals. Here, results of tunneling experiments with the full-Heusler alloy Co 2 Cr 0.6 Fe 0.4 Al are presented. The Heusler alloy is used as an electrode of magnetic tunneling junctions. The junctions are deposited by magnetron DC sputtering using shadow mask techniques with AlO x as a barrier and cobalt as counter electrode. Measurements of the magnetoresistive differential conductivity in a temperature range between 4 and 300 K are shown. An analysis of the barrier properties applying the Simmons model to the bias dependent junction conductivity is performed. VSM measurements were carried out to …

Auxiliary electrodeMaterials scienceCondensed matter physicsMagnetoresistanceSpin polarizationConductivityengineering.materialCondensed Matter PhysicsHeusler compoundElectronic Optical and Magnetic MaterialsTunnel effectTunnel junctionengineeringQuantum tunnellingJournal of Magnetism and Magnetic Materials
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Magnetotransport Properties of Thin Films of Magnetic Perovskites

2007

In this article we show magnetotransport of two prototypical (nearly) half metallic perowskites La2/3Ca1/3MnO3 and Sr2FeMoO6. In a half metal the spin polarisation at the Fermi energy is complete and tunneling magnetoresistive devices of high sensitivity can be realized with small external magnetic fields. In the vicinity of the metal-insulator phase transition (MIT) temperature of the manganite an external magnetic field can induce ’colossal’ magnetoresistive effects. In the simple perovskites La1-x Ca x MnO3 the charge transport above the MIT is of polaronic nature. Hall-effect measurements on the compound La0.67Ca0.33MnO3 below the MIT show a compensated Fermi-surface consisting of elect…

Phase transitionMaterials scienceMagnetoresistanceCondensed matter physicsFerrimagnetismElectrical resistivity and conductivityPhase (matter)Fermi energyHalf-metalManganite
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Large Dzyaloshinskii-Moriya interaction and room-temperature nanoscale skyrmions in CoFeB/MgO heterostructures

2021

Summary Magnetic skyrmions in heavy metal (HM)/CoFeB/MgO structures are of particular interest for skyrmion-based magnetic tunnel junction (MTJ) devices because of their reliable generation, stability, and readout through purely electrical methods. To optimize the properties, such as stability, a strong Dzyaloshinskii-Moriya interaction (DMI) is required at room temperature. Here, using first-principles calculations, we demonstrate that huge DMI can be obtained in Ir/CoFe structures with an Fe-terminated configuration. Moreover, Brillouin light-scattering measurements show that indeed Ta/Ir/Co20Fe60B20/MgO thin films with perpendicular magnetic anisotropy exhibit a large DMI value (1.13 mJ/…

Materials scienceCondensed matter physics530 PhysicsSkyrmionGeneral EngineeringGeneral Physics and AstronomyHeterojunctionGeneral Chemistry530 PhysikMetalBrillouin zoneTunnel magnetoresistanceGeneral Energyvisual_artvisual_art.visual_art_mediumGeneral Materials ScienceMagnetic force microscopeThin filmNanoscopic scale
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