6533b870fe1ef96bd12d05b9
RESEARCH PRODUCT
A Local Study of the Transport Mechanisms in MoS2 Layers for Magnetic Tunnel Junctions
Pierre SeneorAlicia Forment-aliagaFlorian GodelRegina GalceranAymeric VecchiolaJosep Canet-ferrerMaëlis Piquemal-banciSamuel Mañas‐valeroMarta GalbiatiEugenio CoronadoBruno Dlubaksubject
010302 applied physics[PHYS]Physics [physics]Thin layersMaterials scienceCondensed matter physicsMagnetoresistanceSpintronics02 engineering and technology021001 nanoscience & nanotechnology01 natural sciencesLocal studyCharacterization (materials science)0103 physical sciencesGeneral Materials Science[PHYS.COND]Physics [physics]/Condensed Matter [cond-mat]0210 nano-technologyElectrical conductorQuantum tunnellingComputingMilieux_MISCELLANEOUSSpin-½description
MoS2-based vertical spintronic devices have attracted an increasing interest thanks to theoretical predictions of large magnetoresistance signals. However, experimental performances are still far from expectations. Here, we carry out the local electrical characterization of thin MoS2 flakes in a Co/Al2O3/MoS2 structure through conductive tip AFM measurements. We show that thin MoS2 presents a metallic behavior with a strong lateral transport contribution that hinders the direct tunnelling through thin layers. Indeed, no resistance dependence is observed with the flake thickness. These findings reveal a spin depolarization source in the MoS2-based spin valves, thus pointing to possible solutions to improve their spintronic properties.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2018-08-13 |