0000000000522203
AUTHOR
Aymeric Vecchiola
Path to Overcome Material and Fundamental Obstacles in Spin Valves Based on Mo S 2 and Other Transition-Metal Dichalcogenides
International audience; Experimental studies on spin valves with exfoliated 2D materials face the main technological issue of ferromagnetic electrode oxidation during the 2Ds integration process. As a twofold outcome, magne-toresistance (MR) signals are very difficult to obtain and, when they finally are, they are often far from expectations. We propose a fabrication method to circumvent this key issue for 2D-based spintronics devices. We report on the fabrication of NiFe/MoS 2 /Co spin valves with mechanically exfoliated mul-tilayer MoS 2 using an in situ fabrication protocol that allows high-quality nonoxidized interfaces to be maintained between the ferromagnetic electrodes and the 2D la…
Path to Overcome Material and Fundamental Obstacles in Spin Valves Based on MoS2 and Other Transition-Metal Dichalcogenides
The recent introduction of two-dimensional materials into magnetic tunnel junctions (2D MTJs) offers very promising properties for spintronics, such as atomically defined interfaces, spin filtering, perpendicular anisotropy, and modulation of spin-orbit torque. Nevertheless, the difficulty of integrating exfoliated 2D materials into spintronic devices has limited exploration. Here the authors find a fabrication process leading to superior performance in MTJs based on transition-metal dichalcogenides, and further suggest a path to alleviate basic issues of technology and physics for 2D MTJs.
Path to Overcome Material and Fundamental Obstacles in Spin Valves Based on MoS2 and Other Transition-Metal Dichalcogenides
Experimental studies on spin valves with exfoliated 2D materials face the main technological issue of ferromagnetic electrode oxidation during the 2Ds integration process. As a twofold outcome, magnetoresistance (MR) signals are very difficult to obtain and, when they finally are, they are often far from expectations. We propose a fabrication method to circumvent this key issue for 2D-based spintronics devices. We report on the fabrication of NiFe/MoS2/Co spin valves with mechanically exfoliated multilayer MoS2 using an in situ fabrication protocol that allows high-quality nonoxidized interfaces to be maintained between the ferromagnetic electrodes and the 2D layer. Devices display a large …
WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
International audience; We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D…
Very Long Term Stabilization of a 2D Magnet down to the Monolayer for Device Integration
2D materials have recently demonstrated a strong potential for spintronic applications. This has been further reinforced by the discovery of ferromagnetic 2D layers. Nevertheless, the fragility of ...
Wide range local resistance imaging on fragile materials by conducting probe atomic force microscopy in intermittent contact mode
International audience; An imaging technique associating a slowly intermittent contact mode of atomic force microscopy (AFM) with a home-made multi-purpose resistance sensing device is presented. It aims at extending the widespread resistance measurements classically operated in contact mode AFM to broaden their application fields to soft materials (molecular electronics, biology) and fragile or weakly anchored nano-objects, for which nanoscale electrical characterization is highly demanded and often proves to be a challenging task in contact mode. Compared with the state of the art concerning less aggressive solutions for AFM electrical imaging, our technique brings a significantly wider r…
A Local Study of the Transport Mechanisms in MoS2 Layers for Magnetic Tunnel Junctions
MoS2-based vertical spintronic devices have attracted an increasing interest thanks to theoretical predictions of large magnetoresistance signals. However, experimental performances are still far from expectations. Here, we carry out the local electrical characterization of thin MoS2 flakes in a Co/Al2O3/MoS2 structure through conductive tip AFM measurements. We show that thin MoS2 presents a metallic behavior with a strong lateral transport contribution that hinders the direct tunnelling through thin layers. Indeed, no resistance dependence is observed with the flake thickness. These findings reveal a spin depolarization source in the MoS2-based spin valves, thus pointing to possible solut…