6533b86cfe1ef96bd12c8c79
RESEARCH PRODUCT
Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks
Joel CramerBo Wen DongBo Wen DongTomohiko NiizekiEiji SaitohLorenzo BaldratiAndrew RossRafael RamosChristoph SchneiderMathias Kläuisubject
010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceCondensed matter physicsNon-blocking I/OYttrium iron garnet02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyEpitaxy01 natural scienceschemistry.chemical_compoundReflection (mathematics)chemistry0103 physical sciencesAntiferromagnetism0210 nano-technologySpin (physics)description
We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the NiO and γ-Fe2O3 layers, comprising parallel alignment for thin NiO and perpendicular alignment for thick NiO.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-03-11 | Applied Physics Letters |