0000000000415241

AUTHOR

Tomohiko Niizeki

showing 6 related works from this author

Magnon detection using a ferroic collinear multilayer spin valve

2018

Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current-driven spintronic devices. The absence of Joule heating and reduced spin wave damping in insulating ferromagnets have been suggested for implementing efficient logic devices. After the successful demonstration of a majority gate based on the superposition of spin waves, further components are required to perform complex logic operations. Here, we report on magnetization orientation-dependent spin current detection signals in collinear magnetic multilayers inspired by the functionality of a conventional spin valve. In Y3Fe5O12|CoO|Co, we find that the de…

Materials scienceMagnetoresistance530 PhysicsScienceSpin valveGeneral Physics and Astronomy02 engineering and technology01 natural sciencesArticleGeneral Biochemistry Genetics and Molecular BiologyMagnetizationCondensed Matter::Materials ScienceSpin wave0103 physical sciencesddc:530010306 general physicslcsh:ScienceSpin-½MultidisciplinaryCondensed matter physicsSpintronicsCondensed Matter::OtherMagnonQGeneral Chemistry021001 nanoscience & nanotechnology530 PhysikFerromagnetismCondensed Matter::Strongly Correlated Electronslcsh:Q0210 nano-technologyNature Communications
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Ferroic collinear multilayer magnon spin valve

2017

Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current driven spintronic devices. The absence of Joule heating as well as the reduced spin wave damping in insulating ferromagnets has been suggested to enable the implementation of efficient logic devices. After the proof of concept for a logic majority gate based on the superposition of spin waves has been successfully demonstrated, further components are required to perform complex logic operations. A key component is a switch that corresponds to a conventional magnetoresistive spin valve. Here, we report on magnetization orientation dependent spin signal d…

Condensed Matter - Materials ScienceMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesCondensed Matter::Strongly Correlated Electrons
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Spin transport in multilayer systems with fully epitaxial NiO thin films

2018

We report the generation and transport of thermal spin currents in fully epitaxial $\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{3}/\mathrm{NiO}(001)/\mathrm{Pt}$ and $\mathrm{F}{\mathrm{e}}_{3}{\mathrm{O}}_{4}/\mathrm{NiO}(001)/\mathrm{Pt}$ trilayers. A thermal gradient, perpendicular to the plane of the sample, generates a magnonic spin current in the ferrimagnetic maghemite $(\ensuremath{\gamma}\text{\ensuremath{-}}\mathrm{F}{\mathrm{e}}_{2}{\mathrm{O}}_{3})$ and magnetite $(\mathrm{F}{\mathrm{e}}_{3}{\mathrm{O}}_{4})$ thin films by means of the spin Seebeck effect. The spin current propagates across the epitaxial, antiferromagnetic insulating NiO layer…

Condensed Matter - Materials ScienceMaterials scienceCondensed matter physics530 PhysicsMagnonNon-blocking I/OInverseMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciences02 engineering and technology530 Physik021001 nanoscience & nanotechnologyEpitaxy01 natural sciencesCondensed Matter::Materials ScienceFerrimagnetism0103 physical sciencesSpin Hall effectAntiferromagnetismCondensed Matter::Strongly Correlated Electrons010306 general physics0210 nano-technologySpin-½
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Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films

2018

We report the observation of the three-dimensional angular dependence of the spin Hall magnetoresistance (SMR) in a bilayer of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt, without any ferromagnetic element. The detected angular-dependent longitudinal and transverse magnetoresistances are measured by rotating the sample in magnetic fields up to 11 T, along three orthogonal planes (xy-, yz- and xz-rotation planes, where the z-axis is orthogonal to the sample plane). The total magnetoresistance has contributions arising from both the SMR and ordinary magnetoresistance. The onset of the SMR signal occurs between 1 and 3 T and no saturation is visible up to 11 T. Th…

Condensed Matter - Materials ScienceMaterials scienceCondensed matter physicsMagnetoresistance530 PhysicsNon-blocking I/OMaterials Science (cond-mat.mtrl-sci)FOS: Physical sciencesMagnetostrictionInsulator (electricity)02 engineering and technology021001 nanoscience & nanotechnologyEpitaxy530 Physik01 natural sciencesCondensed Matter::Materials ScienceAmplitude0103 physical sciencesAntiferromagnetismCondensed Matter::Strongly Correlated ElectronsThin film010306 general physics0210 nano-technology
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Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe2O3/NiO/Pt epitaxial stacks

2019

We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …

Materials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceCondensed matter physicsNon-blocking I/OPerpendicularYttrium iron garnetAntiferromagnetismAtmospheric temperature rangeEpitaxySpin-½
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Antiferromagnetic NiO thickness dependent sign of the spin Hall magnetoresistance in γ-Fe 2 O 3 /NiO/Pt epitaxial stacks

2019

We study the spin Hall magnetoresistance (SMR) in epitaxial γ–Fe2O3/NiO(001)/Pt stacks, as a function of temperature and thickness of the antiferromagnetic insulating NiO layer. Upon increasing the thickness of NiO from 0 nm to 10 nm, we detect a sign change of the SMR in the temperature range between 10 K and 280 K. This temperature dependence of the SMR in our stacks is different compared to that of previously studied yttrium iron garnet/NiO/Pt, as we do not find any peak or sign change as a function of temperature. We explain our data by a combination of spin current reflection from both the NiO/Pt and γ-Fe2O3/NiO interfaces and the thickness-dependent exchange coupling mode between the …

010302 applied physicsMaterials sciencePhysics and Astronomy (miscellaneous)MagnetoresistanceCondensed matter physicsNon-blocking I/OYttrium iron garnet02 engineering and technologyAtmospheric temperature range021001 nanoscience & nanotechnologyEpitaxy01 natural scienceschemistry.chemical_compoundReflection (mathematics)chemistry0103 physical sciencesAntiferromagnetism0210 nano-technologySpin (physics)Applied Physics Letters
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