0000000000859990

AUTHOR

Risto Punkkinen

showing 2 related works from this author

Aalto-1, multi-payload CubeSat: Design, integration and launch

2021

The design, integration, testing, and launch of the first Finnish satellite Aalto-1 is briefly presented in this paper. Aalto-1, a three-unit CubeSat, launched into Sun-synchronous polar orbit at an altitude of approximately 500 km, is operational since June 2017. It carries three experimental payloads: Aalto Spectral Imager (AaSI), Radiation Monitor (RADMON), and Electrostatic Plasma Brake (EPB). AaSI is a hyperspectral imager in visible and near-infrared (NIR) wavelength bands, RADMON is an energetic particle detector and EPB is a de-orbiting technology demonstration payload. The platform was designed to accommodate multiple payloads while ensuring sufficient data, power, radio, mechanica…

Computer sciencePolar orbitFOS: Physical sciencesAerospace Engineering02 engineering and technologyDesign strategy01 natural sciences7. Clean energyPhysics - Space Physicsmittauslaitteet0203 mechanical engineering0103 physical sciencesBrakeAalto-1CubeSatGround segmentAerospace engineeringInstrumentation and Methods for Astrophysics (astro-ph.IM)010303 astronomy & astrophysicsavaruustekniikkaAalto spectral imagerRadiation monitortutkimussatelliitit020301 aerospace & aeronauticsRadiationSpacecraftbusiness.industryPayloadCubeSatElectrostatic plasma brakesäteilySpace Physics (physics.space-ph)satelliititHyperspectralSatelliteAstrophysics - Instrumentation and Methods for Astrophysicsbusinesskosminen säteily
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Oxidation-Induced Changes in the ALD-Al2O3/InAs(100) Interface and Control of the Changes for Device Processing

2018

InAs crystals are emerging materials for various devices like radio frequency transistors and infrared sensors. Control of oxidation-induced changes is essential for decreasing amounts of the harmful InAs surface (or interface) defects because it is hard to avoid the energetically favored oxidation of InAs surface parts in device processing. We have characterized atomic-layer-deposition (ALD) grown Al2O3/InAs interfaces, preoxidized differently, with synchrotron hard X-ray photoelectron spectroscopy (HAXPES), low-energy electron diffraction, scanning tunneling microscopy, and time-of-flight elastic recoil detection analysis. The chemical environment and core-level shifts are clarified for w…

hapetusMaterials science02 engineering and technologyHigh-electron-mobility transistor01 natural sciences114 Physical scienceslaw.inventionAtomic layer depositionX-ray photoelectron spectroscopyInAslawsynchrotron0103 physical sciencesGeneral Materials Science010302 applied physicsta114business.industryDangling bondatomikerroskasvatus021001 nanoscience & nanotechnologyIII-V semiconductorCrystallographic defectElastic recoil detectionoxidation (active)Electron diffractionatomic layer depositionOptoelectronicsScanning tunneling microscope0210 nano-technologybusinessphotoelectron
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