0000000000876427
AUTHOR
Maurice Glaser
Radiation damage of heavy crystalline detector materials by 24GeV protons
Abstract Samples of three heavy crystalline materials: PbWO4, Bi4Si3O12, and PbF2 were irradiated in a high-intensity 24 GeV proton beam at the CERN PS to fluencies of 3.8×1013 protons/cm2. The optical transmission radiation damage was measured and all crystals show a shift of the cutoff in the transmission spectrum that is not observed when the crystals are irradiated with γ radiation. This shift of the cutoff under proton irradiation seems to be a general property of the heavy crystalline materials. A mechanism for this proton-induced transmission damage is discussed.
Silicon detectors for the sLHC
In current particle physics experiments, silicon strip detectors are widely used as part of the inner tracking layers. A foreseeable large-scale application for such detectors consists of the luminosity upgrade of the Large Hadron Collider (LHC), the super-LHC or sLHC, where silicon detectors with extreme radiation hardness are required. The mission statement of the CERN RD50 Collaboration is the development of radiation-hard semiconductor devices for very high luminosity colliders. As a consequence, the aim of the RandD programme presented in this article is to develop silicon particle detectors able to operate at sLHC conditions. Research has progressed in different areas, such as defect …
Radiation-hard semiconductor detectors for SuperLHC
An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 10^35 cm^(- 2) s(- 1) has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm 2. The CERN-RD50 project ''Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders'' has been established in 2002 to explore…