0000000000878735
AUTHOR
Giovanni Santin
showing 9 related works from this author
Mechanisms of Electron-Induced Single-Event Upsets in Medical and Experimental Linacs
2018
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…
Mechanisms of Electron-Induced Single-Event Latchup
2019
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.
High-Energy Electron-Induced SEUs and Jovian Environment Impact
2017
We present experimental evidence of electron-induced upsets in a reference European Space Agency (ESA) single event upset (SEU) monitor, induced by a 200-MeV electron beam at the Very energetic Electronic facility for Space Planetary Exploration in harsh Radiation environments facility at CERN. Comparison of experimental cross sections and simulated cross sections is shown and the differences are analyzed. Possible secondary contributions to the upset rate by neutrons, flash effects, and cumulative dose effects are discussed, showing that electronuclear reactions are the expected SEU mechanism. The ESA Jupiter Icy Moons Explorer mission, to be launched in 2022, presents a challenging radiat…
Large-angle production of charged pions by 3 GeV/c-12 GeV/c protons on carbon, copper and tin targets
2008
A measurement of the double-differential pi(+/-) production cross-section in proton-carbon, proton-copper and proton-tin collisions in the range of pion momentum 100 MeV/c <= p <800 MeV/c and angle 0.35 rad <= theta < 2.15 rad is presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 GeV/c to 12 GeV/c hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was done using a small-radius cylindrical time projection chamber (TPC) placed in a solenoidal magnet. An elaborate system of detectors in the beam line ensured th…
Mono-energetic electron induced single-event effects at the VESPER facility
2016
We present experimental evidence of electron induced upsets in a reference ESA SEU monitor, the SEU based particle detector, induced by 200 MeV electron beam at the VESPER facility at CERN. Comparison of experimental cross sections and simulated cross sections are shown and the differences are analyzed. Possible secondary contributions to the upset rate by neutrons and cumulative dose effects are discussed, showing that electronuclear reactions are the expected SEU mechanism. Insight is given as to possible overall electron contribution to the upset rates in the Jovian radiation environment inside a typical spacecraft shielding are evaluated.
Influence of beam conditions and energy for SEE testing
2012
GANIL/Applications industrielles; The effects of heavy-ion test conditions and beam energy on device response are investigated. These effects are illustrated with two types of test vehicles: SRAMs and power MOSFETs. In addition, GEANT4 simulations have also been performed to better understand the results. Testing to high fluence levels is required to detect rare events. This increases the probability of nuclear interactions. This is typically the case for power MOSFETs, which are tested at high fluences for single event burnout or gate rupture detection, and for single-event-upset (SEU) measurement in SRAMs below the direct ionization threshold. Differences between various test conditions (…
Measurement of the production cross-section of positive pions in the collision of 8.9 GeV/c protons on beryllium
2007
The double-differential production cross-section of positive pions, $d^2\sigma^{\pi^{+}}/dpd\Omega$, measured in the HARP experiment is presented. The incident particles are 8.9 GeV/c protons directed onto a beryllium target with a nominal thickness of 5% of a nuclear interaction length. The measured cross-section has a direct impact on the prediction of neutrino fluxes for the MiniBooNE and SciBooNE experiments at Fermilab. After cuts, 13 million protons on target produced about 96,000 reconstructed secondary tracks which were used in this analysis. Cross-section results are presented in the kinematic range 0.75 GeV/c < $p_{\pi}$ < 6.5 GeV/c and 30 mrad < $\theta_{\pi}$ < 210 mrad in the l…
Mechanisms of Electron-Induced Single Event Upsets in Medical and Experimental Linacs
2018
In this paper, we perform an in-depth analysis of the single-event effects observed during testing at medical electron linacs and an experimental high-energy electron linac. For electron irradiations, the medical linacs are most commonly used due to their availability and flexibility. Whereas previous efforts were made to characterize the cross sections at higher energies, where the nuclear interaction cross section is higher, the focus of this paper is on the complete overview of relevant electron energies. Irradiations at an electron linac were made with two different devices, with a large difference in feature size. The irradiations at an experimental linac were performed with varying en…
Mechanisms of Electron-Induced Single Event Latchup
2019
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed. peerReviewed