6533b7d1fe1ef96bd125c339
RESEARCH PRODUCT
Mechanisms of Electron-Induced Single-Event Latchup
Giovanni SantinMarkus BruggerMaris TaliArto JavanainenRoberto CorsiniVeronique Ferlet-cavroisCesar Boatella PoloWilfrid FaraboliniAri VirtanenRuben Garcia Aliasubject
Nuclear and High Energy PhysicsWork (thermodynamics)Materials scienceSiliconchemistry.chemical_elementLinear energy transferContext (language use)Electronhiukkaskiihdyttimetelektronit01 natural sciencesradiation physics0103 physical sciencesElectronicsStatic random-access memoryDetectors and Experimental TechniquesElectrical and Electronic EngineeringRadiation hardeningta114010308 nuclear & particles physicsbusiness.industryelectronsparticle acceleratorssäteilyfysiikkaNuclear Energy and EngineeringchemistryOptoelectronicsbusinessdescription
In this paper, possible mechanisms by which electrons can induce single-event latchups in electronics are discussed. The energy deposition and the nuclear fragments created by electrons in silicon are analyzed in this context. The cross section enhancement effect in the presence of high-Z materials is discussed. First experimental results of electron-induced latchups are shown in static random access memory devices with low linear energy transfer thresholds. The radiation hardness assurance implications and future work are discussed.
| year | journal | country | edition | language |
|---|---|---|---|---|
| 2019-01-01 | IEEE Transactions on Nuclear Science |