Partial Discharge Behaviour Evaluation on MOSFET Employed in Automotive Applications

This paper is focused on the measurement of partial discharges in the Silicon Carbide MOSFET. The latter represents a recent developed power electronics device, which has improved characteristics compared to the traditional Silicon MOSFET. The new technology has been conceived in order to satisfy the new market needs. With the ever-increasing development of the electric mobility sector, the need for ever more performing electronic power devices grows. The main features provided by the Silicon Carbide device were found in literature and concern a great thermal conductivity, wide bandgap, high power and high working temperature. However, considering the high voltage at which these devices wor…