0000000000918919
AUTHOR
Ulrich Nickel
Understanding Acid Reaction and Diffusion in Chemically Amplified Photoresists: An Approach at the Molecular Level
Acid diffusion in chemically amplified resist might limit the ultimate minimum half-pitch that can be achieved with high sensitivity resists unless diffusion length is reduced until new methods of sensitizing resists are found. Precise knowledge of molecular dynamics of resist materials and advanced techniques need to be developed actively for this issue. In this sense, computer simulations have become a valuable tool in terms of reducing time and costs. However, simulations are generally based on continuum or mesoscale models, which are unable to accurately predict variations at the molecular level. Deeper understanding and investigation of the coupled reaction-diffusion kinetics at the mo…
Charge dissipation in e-beam lithography with Novolak-based conducting polymer films
Charging of common resist materials during electron beam (e-beam) writing leads to deflection of the electron beam path, which can result in significant pattern displacement. Here we report a new conducting polymer to eliminate charging. A common approach is to place the conducting layer underneath the e-beam resist layer. Conductivity equal or greater than 10(-4) S cm(-1) has been reported to prevent pattern displacement. Some other properties such as a flat surface layer, chemical inertness and insolubility in both the top resist solvent and the developer are also necessary. The way to achieve all these properties consisted in synthesizing a conducting polymer inside an insulating polymer…