0000000000918989
AUTHOR
C. Herberg
Determination of the neutron electric form factor in the D(e,e′n)p reaction and the influence of nuclear binding
The electric form factor of the neutron GE,n has been determined at the Mainz Microtron MAMI at the low momentum transfer Q2= 0.15 (GeV/c)2 in a measurement of the recoil polarisation ratio Px/Pz in the quasifree reaction D(e,e′n)p. At this Q2 the influence of the nuclear binding is strong. A purely kinematical model is used to get some insight into the effect of the initial Fermi momentum distribution of the neutron. The influence of the final state interaction is determined quantitatively by a model of Arenhovel et al.. After the corresponding corrections a value of GE,n(0.15 (GeV/c)2) = 0.0481±0.0065stat±0.0053syst is obtained.
Determination of the neutron electric form factor from the reaction 3 He(e,e'n) at medium momentum transfer
The electric form factor of the neutron GEn has been determined in double polarized exclusive 3He(e,e'n) scattering in quasi–elastic kinematics by measuring asymmetries A⊥, A∥ of the cross section with respect to helicity reversal of the electron, with the nuclear spin being oriented perpendicular to the momentum transfer q in case of A⊥ and parallel in case of A∥. The experiment was performed at the 855 MeV c. w. microtron MAMI at Mainz. The degree of polarization of the electron beam and of the gaseous 3He target were each about 50%. Scattered electrons and neutrons were detected in coincidence by detector arrays covering large solid angles. Quasi–elastic scattering events were reconstruc…
How narrow is the linewidth of parametric X-ray radiation?
Parametric x-ray or quasi-Cherenkov radiation is produced by the passage of an electron through a crystal. A critical absorber technique has been employed to investigate its linewidth. Experiments have been performed with the 855MeV electron beam from the Mainz Microtron MAMI. Thin absorber foils were mounted in front of a CCD camera serving as a position sensitive photon detector. Upper limits of the linewidth of 1.2 and 3.5eV were determined for the (111) and (022) reflections of silicon at photon energies of 4966 and 8332eV. These limits originate from geometrical line broadening effects that can be optimized to reach the ultimate limit given by the finite length of the wave train. {copy…
Transition radiation in the x-ray region from a low emittance 855 MeV electron beam
A quasi-monochromatic hard x-ray beam with a photon energy of 33 keV has been produced from transition radiation (TR) at the Mainz Microtron MAMI. The radiator was a stack of 30 polyimide foils of 25 μm thickness and 75 μm separation and the monochromator a highly-oriented pyrolytic graphite crystal. The intrinsic bandwidth was measured with a critical absorption technique to be 100 eV. On the basis of these experiments a photon flux of 4⋅109/mm2s over an illuminated area of 5.7×125 mm2 can be expected from an optimized beryllium radiator at a beam current of 100 μA. At the K-absorption edge of titanium at 5 keV narrow band transition radiation has been observed from a stack of four foils o…