0000000000921700

AUTHOR

Veaceslav Ursaki

showing 3 related works from this author

Structural and vibrational properties of CdAl2S4 under high pressure: Experimental and theoretical approach

2014

The behavior of defect chalcopyrite CdAl2S4 at high pressures and ambient temperature has been investigated in a joint experimental and theoretical study. High-pressure X-ray diffraction and Raman scattering measurements were complemented with theoretical ab initio calculations. The equation of state and pressure dependences of the structural parameters of CdAl2S4 were determined and compared to those of other AB(2)X(4) ordered-vacancy compounds. The pressure dependence of the Raman-active mode frequencies is reported, as well as the theoretical phonon dispersion curves and phonon density of states at 1 atm. Our measurements suggest that defect chalcopyrite CdAl2S4 undergoes a phase transit…

DiffractionPhase transitionEquation of stateHigh-pressurePhononSpinelCondensed Matter::Materials Sciencesymbols.namesakeAb initio quantum chemistry methodsPhase (matter)Physical and Theoretical ChemistryRamanCondensed matter physicsChemistryDefect chalcopyriteSurfaces Coatings and FilmsElectronic Optical and Magnetic MaterialsOrdered-vacancy compoundsX-ray diffractionCrystallographyGeneral EnergyFISICA APLICADAsymbolsRaman spectroscopyRaman scattering
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Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4

2021

Abstract This paper reports a joint experimental and theoretical study of the electronic band structure of two ordered-vacancy compounds with defect-chalcopyrite structure: CdGa2S4 and HgGa2S4. High-pressure optical-absorption experiments (up to around 17 GPa) combined with first-principles electronic band-structure calculations provide compelling evidence of strong nonlinear pressure dependence of the bandgap in both compounds. The nonlinear pressure dependence is well accounted for by the band anticrossing model that was previously established mostly for selenides with defect chalcopyrite structure. Therefore, our results on two sulfides with defect chalcopyrite structure under compressio…

Materials scienceCondensed matter physicsBand gapChalcopyriteMechanical EngineeringMetals and AlloysPressure dependenceIonNonlinear systemMechanics of MaterialsVacancy defectvisual_artMaterials Chemistryvisual_art.visual_art_mediumDirect and indirect band gapsElectronic band structureJournal of Alloys and Compounds
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Crystal structure of HgGa2Se4 under compression

2013

We report on high-pressure x-ray diffraction measurements up to 17.2 GPa in mercury digallium selenide (HgGa2Se4). The equation of state and the axial compressibilities for the low-pressure tetragonal phase have been determined and compared to related compounds. HgGa2Se4 exhibits a phase transition on upstroke toward a disordered rock-salt structure beyond 17 GPa, while on downstroke it undergoes a phase transition below 2.1 GPa to a phase that could be assigned to a metastable zinc-blende structure with a total cation-vacancy disorder. Thermal annealing at low- and high-pressure shows that kinetics plays an important role on pressure-driven transitions.

Phase transitionChemistrybusiness.industryMechanical EngineeringCrystal structureCrystal structureCondensed Matter PhysicsX-ray diffractionCrystallographyTetragonal crystal systemHigh pressureSemiconductorMechanics of MaterialsPhase transitionsHigh pressureFISICA APLICADAX-ray crystallographyGeneral Materials ScienceChalcogénidesbusiness
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