Numerical analysis of the influence of ultrasonic vibration on crystallization processes

The challenge in the future fabrication of semiconductor bulk crystals is the improvement of the crystal quality with a simultaneous increase of the yield. For that, a proper control of mass transfer within the fluid phase is required. Besides the damping of violent convective fluctuations, the thickness of the diffusion boundary layer, causing morphological instability, has to be decreased. The influence of ultrasound in molten Germanium was analyzed by numerical simulations. The simulations were provided by applying commercial software packages ANSYS ® and FLUENT ® . ANSYS ® was used to model the ultrasonic wave propagation in the whole growth system consisting of melt and crystal, crucib…