0000000000931363
AUTHOR
Young Hee Lee
Transition from direct to Fowler-Nordheim tunneling in chemically reduced graphene oxide film.
We investigate charge transport in a chemically reduced graphene oxide (RGO) film of sub-micron thickness. The I-V curve of RGO film shows current switching of the order of ∼10(5) above the threshold voltage. We found that the observed I-V curve is consistent with quantum tunnelling based charge transport. The quantum tunnelling based Simmons generalized theory was used to interpret the charge transport mechanism which shows that the current switching phenomenon is associated with transition from direct to Fowler-Nordheim (F-N) tunneling. The absence of current switching in the I-V curve after stripping away the oxygen functional groups from chemically RGO film confirms that the presence of…
Spin-orbit, radial, and angular coupling effects in the NaRb excited states
Spin-orbit, radial, and angular nonadiabatic matrix elements between the lowest excited states of NaRb are evaluated by quasi-relativistic ab initio methods, and the results accompanied by potential curves, permanent and transition moments are compared with experimental data and preceding calculations.