0000000000935075

AUTHOR

Daniele Ielmini

0000-0002-1853-1614

showing 3 related works from this author

How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

2004

For the first time, memory devices with optimized high density (2E12#/cm/sup 2/) LPCVD Si nanocrystals have been reproducibly achieved and studied on an extensive statistical basis (from single cell up to 1 Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND flash at least to the 35 nm and 65 nm nodes, respectively.

Materials sciencesezeleSiliconbusiness.industryNAND gatechemistry.chemical_elementNanotechnologyChemical vapor depositionSettore ING-INF/01 - ElettronicaThreshold voltageNanocrystalNanoelectronicschemistryOptoelectronicsElectrical and Electronic EngineeringbusinessScience technology and societyScaling
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Valence change ReRAMs (VCM) - Experiments and modelling: General discussion

2019

Valence change ReRAMs (VCM) - Experiments and modelling: General discussion

PhysicsValence (chemistry)Settore ING-IND/23 - Chimica Fisica ApplicataCondensed matter physicsUT-Hybrid-DValence change ReRAMs (VCM) Experiments modellingPhysical and Theoretical Chemistry22/4 OA procedure
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Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: general discussion

2019

Electrochemical metallization ReRAMs (ECM) - Experiments and modelling: General discussion

Settore ING-IND/23 - Chimica Fisica ApplicataMaterials scienceElectrochemical metallization ReRAMs Experiments modellingNanotechnologyOtaNanoPhysical and Theoretical ChemistryElectrochemistry22/4 OA procedure
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