0000000000943160
AUTHOR
Mauro Brotons-gisbert
showing 14 related works from this author
Spin-layer locking of interlayer excitons trapped in moir\'e potentials
2019
Van der Waals heterostructures offer attractive opportunities to design quantum materials. For instance, transition metal dichalcogenides (TMDs) possess three quantum degrees of freedom: spin, valley index, and layer index. Further, twisted TMD heterobilayers can form moir\'e patterns that modulate the electronic band structure according to atomic registry, leading to spatial confinement of interlayer exciton (IXs). Here we report the observation of spin-layer locking of IXs trapped in moir\'e potentials formed in a heterostructure of bilayer 2H-MoSe$_2$ and monolayer WSe$_2$. The phenomenon of locked electron spin and layer index leads to two quantum-confined IX species with distinct spin-…
Mesoporous iron phosphate/phosphonate hybrid materials
2014
Abstract Relatively high surface area pure mesoporous iron-phosphorus oxide-based derivatives have been synthesized through an S + I − surfactant-assisted cooperative mechanism by means of a one-pot preparative procedure from aqueous solution and starting from iron atrane complexes and phosphoric and phosphonic acids. A soft chemical extraction procedure allows opening the pore system of the parent as-prepared materials by exchanging the surfactant without mesostructure collapse. The nature of the pore wall can be modulated from iron phosphate up to hybrids involving approximately 30% of organophosphorus entities (phosphonates or diphosphonates). X-ray powder diffraction, transmission elect…
Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap.
2016
Brotons-Gisbert, Mauro et al.
Optical contrast of 2D InSe on SiO2/Si and transparent substrates using bandpass filters
2017
The particular optical and electronic properties recently reported for 2D InSe depict this 2D material as being very versatile for future electronic and optoelectronic devices with tunable and optimized functionalities. For its fundamental study and the development of practical applications, rapid and accurate identification methods of atomically thin InSe are essential. Here, we demonstrate an enhancement of the optical contrast between InSe nanosheets and the underlying SiO2/Si substrate by illuminating with a 40 nm wide bandpass filter centered at 500 nm. Moreover, we study the optical contrast of 2D InSe on transparent substrates. Our results suggest that a good optical contrast is achi…
Comprehensive Theoretical and Experimental Study of Short- and Long-Term Stability in a Passively Mode-Locked Solitonic Fiber Laser
2015
We demonstrate the short- and long-term stable operation of an all-polarization-maintained Fabry–Perot cavity passively mode-locked fiber laser. The laser operates in an all-anomalous-dispersion solitonic regime. Laser stability is studied by a variety of measurements, which confirm the high stability of the laser in the temporal and spectral–both optical and electrical-domains. Pulse durations of 540 fs, period-relative time jitters of $\sim$ 0.015‰, and long-term uninterrumped operation with 0.4% variation (standard deviation) in the average output power are obtained. The highly stable operation of the laser oscillator was maintained after amplifying the laser output with a conventional E…
Engineering light emission of two-dimensional materials in both the weak and strong coupling regimes
2017
Abstract Two-dimensional (2D) materials have promising applications in optoelectronics, photonics, and quantum technologies. However, their intrinsically low light absorption limits their performance, and potential devices must be accurately engineered for optimal operation. Here, we apply a transfer matrix-based source-term method to optimize light absorption and emission in 2D materials and related devices in weak and strong coupling regimes. The implemented analytical model accurately accounts for experimental results reported for representative 2D materials such as graphene and MoS2. The model has been extended to propose structures to optimize light emission by exciton recombination in…
Resonant laser spectroscopy of localized excitons in monolayer WSe_2
2016
Coherent quantum control and resonance fluorescence of few-level quantum systems is integral for quantum technologies. Here we perform resonance and near-resonance excitation of three-dimensionally confined excitons in monolayer WSe2 to reveal near-ideal single-photon fluorescence with count rates up to 3 MHz. Using high-resolution photoluminescence excitation spectroscopy of the localized excitons, we uncover a weakly fluorescent exciton state ∼5 meV blue shifted from the ground-state exciton, providing important information to unravel the precise nature of quantum states. Successful demonstration of resonance fluorescence paves the way to probe the localized exciton coherence in two-dime…
Functionalized Gold Nanoparticles as an Approach to the Direct Colorimetric Detection of DCNP Nerve Agent Simulant
2013
New functionalized gold nanoparticles have been synthesized and their ability to act as colorimetric molecular probes for the naked-eye detection of nerve agent simulant DCNP has been studied. The detection process is based on the com
Thickness identification of atomically thin InSe nanoflakes on SiO2/Si substrates by optical contrast analysis
2015
Abstract Single layers of chalcogenide semiconductors have demonstrated to exhibit tunable properties that can be exploited for new field-effect transistors and photonic devices. Among these semiconductors, indium selenide (InSe) is attractive for applications due to its direct bandgap in the near infrared, controllable p- and n-type doping and high chemical stability. For its fundamental study and the development of practical applications, rapid and accurate identification methods of atomically thin nanosheets are essential. Here, we employ a transfer matrix approach to numerically calculate the optical contrast between thin InSe flakes and commonly used SiO2/Si substrates, which nicely re…
Nanoscale strain-engineering and optics of quantum emitters in a two-dimensional semiconductor
2017
We present deterministic fabrication of a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. Resonant laser spectroscopy of these emitters reveals localized exciton states that exhibit stable, bright and high-purity single photon emission.
Optical and electronic properties of 2H−MoS2 under pressure: Revealing the spin-polarized nature of bulk electronic bands
2018
Monolayers of transition-metal dichalcogenide semiconductors present spin-valley locked electronic bands, a property with applications in valleytronics and spintronics that is usually believed to be absent in their centrosymmetric (as the bilayer or bulk) counterparts. Here we show that bulk $2\mathrm{H}\text{\ensuremath{-}}\mathrm{Mo}{\mathrm{S}}_{2}$ hides a spin-polarized nature of states determining its direct band gap, with the spin sequence of valence and conduction bands expected for its single layer. This relevant finding is attained by investigating the behavior of the binding energy of $A$ and $B$ excitons under high pressure, by means of absorption measurements and density-functi…
Optical and dielectric properties of MoO 3 nanosheets for van der Waals heterostructures
2021
Two-dimensional (2D) insulators are a key element in the design and fabrication of van der Waals heterostructures. They are vital as transparent dielectric spacers whose thickness can influence both the photonic, electronic, and optoelectronic properties of 2D devices. Simultaneously, they provide protection of the active layers in the heterostructure. For these critical roles, hexagonal Boron Nitride (hBN) is the dominant choice due to its large bandgap, atomic flatness, low defect density, and encapsulation properties. However, the broad catalogue of 2D insulators offers exciting opportunities to replace hBN in certain applications that require transparent thin layers with additional opti…
Out-of-plane orientation of luminescent excitons in two-dimensional indium selenide.
2019
Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe2 and MoSe2. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe2 and MoSe2 at room-…
Out-of-plane orientation of luminescent excitons in atomically thin indium selenide flakes
2019
Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredient of the van der Waals platform is a two-dimensional crystal with naturally occurring out-of-plane luminescent dipole orientation. Here we measure the far-field photoluminescence intensity distribution of bulk InSe and two-dimensional InSe, WSe$_2$ and MoSe$_2$. We demonstrate, with the support of ab-initio calculations, that layered InSe flakes sustain luminescent excitons with an intrinsic out-of-plane orientation, in contrast with the in-plane orientation of dipoles we find in two-dimensional WSe$_2$ and MoSe$…