0000000001009978
AUTHOR
F. Wrobel
Direct Ionization Impact on Accelerator Mixed-Field Soft Error Rate
We investigate, through measurements and simulations, the possible direct ionization impact in the accelerator soft error rate, not considered in standard qualification approaches. Results show that, for a broad variety of state-of-the art commercial components considered in the 65 nm to 16 nm technological range, indirect ionization is still expected to dominate the overall soft-error rate in the accelerator mixed-field. However, the derived critical charges of the most sensitive parts, corresponding to ∼0.7 fC, are expected to be at the limit of rapid direct ionization dominance and soft-error increase. peerReviewed
Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random-Access Memory
This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. The underlying mechanisms are discussed. peerReviewed